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ChinaBSM75GAR120DN2HOSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSM75GAR120DN2HOSA1
BESCHREIBUNG
IGBT MOD 1200V 30A 235W
DETAILIERTE BESCHREIBUNG
IGBT Module Trench Field Stop Single 1200 V 30 A 235 W Chassis Mount Module
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
10
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tray
Product Status
Obsolete
IGBT Type
Trench Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
30 A
Power - Max
235 W
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 15A
Current - Collector Cutoff (Max)
400 µA
Input Capacitance (Cies) @ Vce
1 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM75GAR120
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFINFBSM75GAR120DN2HOSA1
2156-BSM75GAR120DN2HOSA1
SP000100462
BSM75GAR120DN2
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies BSM75GAR120DN2HOSA1
Dokumente und Medien
-
Menge Preis
-
Stellvertreter
Teil Nr. : DF150R12RT4HOSA1
Hersteller. : Rochester Electronics, LLC
Verfügbare Menge. : 811
Einzelpreis. : $95.33000
Ersatztyp. : Similar
Verfügbare Menge. : 811
Einzelpreis. : $95.33000
Ersatztyp. : Similar