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China2SB507E
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2SB507E
BESCHREIBUNG
TRANSISTOR
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 60 V 3 A 8MHz 1.75 W Through Hole TO-220
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
641
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 2A
Current - Collector Cutoff (Max)
5mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1A, 2V
Power - Max
1.75 W
Frequency - Transition
8MHz
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONS2SB507E
2156-2SB507E
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SB507E
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 641
Einzelpreis: $0.47
Verpackung: Bulk
MinMultiplikator: 641
Verpackung: Bulk
MinMultiplikator: 641
Stellvertreter
-