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ChinaEMD4DXV6T5
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TEILNUMMER DES HERSTELLERS
EMD4DXV6T5
BESCHREIBUNG
SMALL SIGNAL BIPOLAR TRANSISTOR
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased 50V 100mA 357mW Surface Mount SOT-563
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
6,662
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Active
Transistor Type
1 NPN, 1 PNP - Pre-Biased
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
47kOhms
Resistor - Emitter Base (R2)
47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)
500nA
Frequency - Transition
-
Power - Max
357mW
Grade
-
Qualification
-
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-666
Supplier Device Package
SOT-563
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-EMD4DXV6T5
ONSONSEMD4DXV6T5
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar Transistor Arrays, Pre-Biased/onsemi EMD4DXV6T5
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 6662
Einzelpreis: $0.05
Verpackung: Bulk
MinMultiplikator: 6662
Verpackung: Bulk
MinMultiplikator: 6662
Stellvertreter
-