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ChinaIGLD60R070D1AUMA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IGLD60R070D1AUMA1
BESCHREIBUNG
GANFET N-CH 600V 15A LSON-8
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 15A (Tc) 114W (Tc) Surface Mount PG-LSON-8-1
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolGaN™
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
1.6V @ 2.6mA
Vgs (Max)
-10V
Input Capacitance (Ciss) (Max) @ Vds
380 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
114W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-LSON-8-1
Package / Case
8-LDFN Exposed Pad
Base Product Number
IGLD60
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP001705420
IGLD60R070D1AUMA1DKR
IGLD60R070D1AUMA1TR
2156-IGLD60R070D1AUMA1TR
IGLD60R070D1AUMA1CT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IGLD60R070D1AUMA1
Dokumente und Medien
Datasheets
()
Other Related Documents
()
Product Brief
1(CoolGaN™ 600 V e-mode GaN HEMTs Brief)
Article Library
1(Why CoolGaN)
HTML Datasheet
()
Reliability Documents
1(Realiability and Qualification of CoolGaN)
Menge Preis
-
Stellvertreter
Teil Nr. : IGLD60R070D1AUMA3
Hersteller. : Infineon Technologies
Verfügbare Menge. : 1,549
Einzelpreis. : $13.48000
Ersatztyp. : Direct
Verfügbare Menge. : 1,549
Einzelpreis. : $13.48000
Ersatztyp. : Direct