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ChinaRN1109MFV,L3F
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RN1109MFV,L3F
BESCHREIBUNG
TRANS PREBIAS NPN 50V 0.1A VESM
DETAILIERTE BESCHREIBUNG
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM
HERSTELLER
Toshiba Semiconductor and Storage
STANDARD LEADTIME
EDACAD-MODELL
RN1109MFV,L3F Models
STANDARDPAKET
8,000
Lagerbestände
Technische Daten
Mfr
Toshiba Semiconductor and Storage
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
47 kOhms
Resistor - Emitter Base (R2)
22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)
500nA
Power - Max
150 mW
Mounting Type
Surface Mount
Package / Case
SOT-723
Supplier Device Package
VESM
Base Product Number
RN1109
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
RN1109MFV,L3F(B
RN1109MFVL3F
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single, Pre-Biased Bipolar Transistors/Toshiba Semiconductor and Storage RN1109MFV,L3F
Dokumente und Medien
Datasheets
1(RN1107MFV-09MFV)
EDA Models
1(RN1109MFV,L3F Models)
Menge Preis
-
Stellvertreter
-