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China2N5551
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
2N5551
BESCHREIBUNG
BJT TO-92 160V 600MA NPN 0.625W
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 160 V 600 mA 300MHz 625 mW Through Hole TO-92
HERSTELLER
Diotec Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
2N5551 Models
STANDARDPAKET
4,000
Lagerbestände
Technische Daten
Mfr
Diotec Semiconductor
Series
-
Package
Tape & Reel (TR)
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
600 mA
Voltage - Collector Emitter Breakdown (Max)
160 V
Vce Saturation (Max) @ Ib, Ic
200mV @ 5mA, 50mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 10mA, 5V
Power - Max
625 mW
Frequency - Transition
300MHz
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0000
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Diotec Semiconductor 2N5551
Dokumente und Medien
Datasheets
1(2N5551 Datasheet)
CAD Models
1(2N5551 Models)
Simulation Models
1(2N5551 Spice Model)
Menge Preis
QUANTITÄT: 4000
Einzelpreis: $0.03102
Verpackung: Tape & Reel (TR)
MinMultiplikator: 4000
Verpackung: Tape & Reel (TR)
MinMultiplikator: 4000
Stellvertreter
-