Technology
MOSFET (Metal Oxide)
Configuration
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Rds On (Max) @ Id, Vgs
7Ohm @ 1A, 10V, 8Ohm @ 1A, 10V
Vgs(th) (Max) @ Id
2V @ 1mA, 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
110pF @ 25V, 200pF @ 25V
Operating Temperature
-55°C ~ 175°C
Mounting Type
Surface Mount
Package / Case
8-VDFN Exposed Pad
Supplier Device Package
8-VDFN (6x5)
Base Product Number
TC6321