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ChinaIPS20N03L G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPS20N03L G
BESCHREIBUNG
MOSFET N-CH 30V 30A TO251-3
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 30A (Ta) Through Hole PG-TO251-3-11
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
30A (Ta)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
-
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Through Hole
Supplier Device Package
PG-TO251-3-11
Base Product Number
IPS20N
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IPS20N03LGX
IPS20N03LGXK
IPS20N03LG
IPS20N03L G-ND
SP000064380
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPS20N03L G
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