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ChinaSI6463BDQ-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI6463BDQ-T1-GE3
BESCHREIBUNG
MOSFET P-CH 20V 6.2A 8-TSSOP
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 6.2A (Ta) Surface Mount 8-TSSOP
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
6.2A (Ta)
Rds On (Max) @ Id, Vgs
15mOhm @ 7.4A, 4.5V
Vgs(th) (Max) @ Id
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs
60 nC @ 5 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
8-TSSOP
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Base Product Number
SI6463
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI6463BDQ-T1-GE3DKR
SI6463BDQ-T1-GE3CT
Q8873440
Q8873440A
SI6463BDQT1GE3
SI6463BDQ-T1-GE3TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI6463BDQ-T1-GE3
Dokumente und Medien
Datasheets
1(Si6463BDQ)
Environmental Information
()
PCN Obsolescence/ EOL
()
HTML Datasheet
1(Si6463BDQ)
Menge Preis
-
Stellvertreter
-