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ChinaPMR780SN115
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
PMR780SN115
BESCHREIBUNG
SMALL SIGNAL N-CHANNEL MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 60 V 550mA (Ta) 530mW (Tc) Surface Mount SC-75
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
TrenchMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
920mOhm @ 300mA, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.05 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
23 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
530mW (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SC-75
Package / Case
SC-75, SOT-416
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-PMR780SN115
NEXNXPPMR780SN115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/NXP USA Inc. PMR780SN115
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
-
Stellvertreter
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