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ChinaSIB900EDK-T1-GE3
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TEILNUMMER DES HERSTELLERS
SIB900EDK-T1-GE3
BESCHREIBUNG
MOSFET 2N-CH 20V 1.5A SC75-6L
DETAILIERTE BESCHREIBUNG
Mosfet Array 20V 1.5A 3.1W Surface Mount PowerPAK® SC-75-6L Dual
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
20V
Current - Continuous Drain (Id) @ 25°C
1.5A
Rds On (Max) @ Id, Vgs
225mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
1.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
3.1W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
PowerPAK® SC-75-6L Dual
Supplier Device Package
PowerPAK® SC-75-6L Dual
Base Product Number
SIB900
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SIB900EDK-T1-GE3CT
SIB900EDKT1GE3
SIB900EDK-T1-GE3DKR
SIB900EDK-T1-GE3TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Vishay Siliconix SIB900EDK-T1-GE3
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