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ChinaBUV21G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BUV21G
BESCHREIBUNG
SWITCHMODE NPN SILICON POWER TRA
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 200 V 40 A 8MHz 250 W Through Hole TO-204 (TO-3)
HERSTELLER
Sanyo
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
21
Lagerbestände
Technische Daten
Mfr
Sanyo
Series
SWITCHMODE™
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
40 A
Voltage - Collector Emitter Breakdown (Max)
200 V
Vce Saturation (Max) @ Ib, Ic
1.5V @ 3A, 25A
Current - Collector Cutoff (Max)
3mA
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 12A, 2V
Power - Max
250 W
Frequency - Transition
8MHz
Operating Temperature
-65°C ~ 200°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-204AE
Supplier Device Package
TO-204 (TO-3)
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
ONSONSBUV21G
2156-BUV21G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Sanyo BUV21G
Dokumente und Medien
Datasheets
1(BUV21G Datasheet)
Menge Preis
QUANTITÄT: 21
Einzelpreis: $14.49
Verpackung: Bulk
MinMultiplikator: 21
Verpackung: Bulk
MinMultiplikator: 21
Stellvertreter
-