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ChinaSI4836DY-T1-E3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI4836DY-T1-E3
BESCHREIBUNG
MOSFET N-CH 12V 17A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 12 V 17A (Ta) 1.6W (Ta) Surface Mount 8-SOIC
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
3mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id
400mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 4.5 V
Vgs (Max)
±8V
FET Feature
-
Power Dissipation (Max)
1.6W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4836
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI4836DY-T1-E3-ND
SI4836DYT1E3
SI4836DY-T1-E3TR
SI4836DY-T1-E3CT
SI4836DY-T1-E3DKR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4836DY-T1-E3
Dokumente und Medien
Datasheets
1(SI4836DY)
HTML Datasheet
1(SI4836DY)
Menge Preis
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Stellvertreter
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