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ChinaSI3447CDV-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI3447CDV-T1-GE3
BESCHREIBUNG
MOSFET P-CH 12V 7.8A 6TSOP
DETAILIERTE BESCHREIBUNG
P-Channel 12 V 7.8A (Tc) 2W (Ta), 3W (Tc) Surface Mount 6-TSOP
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
12 V
Current - Continuous Drain (Id) @ 25°C
7.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Rds On (Max) @ Id, Vgs
36mOhm @ 6.3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
30 nC @ 8 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
910 pF @ 6 V
FET Feature
-
Power Dissipation (Max)
2W (Ta), 3W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
SI3447
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI3447CDV-T1-GE3CT
SI3447CDV-T1-GE3DKR
SI3447CDVT1GE3
SI3447CDV-T1-GE3TR
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI3447CDV-T1-GE3
Dokumente und Medien
Datasheets
1(SI3447CDV)
PCN Obsolescence/ EOL
1(Multiple Devices 14/Mar/2018)
PCN Assembly/Origin
1(New Solder Plating Site 18/Apr/2023)
HTML Datasheet
1(SI3447CDV)
Menge Preis
-
Stellvertreter
Teil Nr. : SI3493DDV-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $0.37000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $0.37000
Ersatztyp. : Similar