Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1700 V
Current - Continuous Drain (Id) @ 25°C
68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Rds On (Max) @ Id, Vgs
45mOhm @ 30A, 20V
Vgs(th) (Max) @ Id
3.25V @ 2.5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs
178 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds
3300 pF @ 1000 V
Power Dissipation (Max)
370W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-247-4