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ChinaBSM25GB120DN2
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSM25GB120DN2
BESCHREIBUNG
IGBT MODULE
DETAILIERTE BESCHREIBUNG
IGBT Module Half Bridge 1200 V 38 A 200 W Chassis Mount Module
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
9
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Bulk
Product Status
Active
IGBT Type
-
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
38 A
Power - Max
200 W
Vce(on) (Max) @ Vge, Ic
3V @ 15V, 25A
Current - Collector Cutoff (Max)
800 µA
Input Capacitance (Cies) @ Vce
1.65 nF @ 25 V
Input
Standard
NTC Thermistor
No
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFINFBSM25GB120DN2
2156-BSM25GB120DN2
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Infineon Technologies BSM25GB120DN2
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 9
Einzelpreis: $34.73
Verpackung: Bulk
MinMultiplikator: 9
Verpackung: Bulk
MinMultiplikator: 9
Stellvertreter
-