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TEILNUMMER DES HERSTELLERS
HTNFET-T
BESCHREIBUNG
MOSFET N-CH 55V 4POWER TAB
DETAILIERTE BESCHREIBUNG
N-Channel 55 V 50W (Tj) Through Hole 4-Power Tab
HERSTELLER
Honeywell Aerospace
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Honeywell Aerospace
Series
HTMOS™
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
55 V
Current - Continuous Drain (Id) @ 25°C
-
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
400mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id
2.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
4.3 nC @ 5 V
Vgs (Max)
10V
Input Capacitance (Ciss) (Max) @ Vds
290 pF @ 28 V
FET Feature
-
Power Dissipation (Max)
50W (Tj)
Operating Temperature
-55°C ~ 225°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
4-Power Tab
Package / Case
4-SIP
Base Product Number
HTNFET
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
342-1091
HTNFETT
HTNFET-T-ND
22022208-002
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Honeywell Aerospace HTNFET-T
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1(HTNFET Datasheet ~)
HTML Datasheet
1(HTNFET Datasheet ~)
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