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ChinaIRF6641TR1PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6641TR1PBF
BESCHREIBUNG
MOSFET N-CH 200V 4.6A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 4.6A (Ta), 26A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
4.6A (Ta), 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
59.9mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4.9V @ 150µA
Gate Charge (Qg) (Max) @ Vgs
48 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
2290 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MZ
Package / Case
DirectFET™ Isometric MZ
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF6641TR1PBFDKR
IRF6641TR1PBFTR
SP001563484
IRF6641TR1PBFCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6641TR1PBF
Dokumente und Medien
Datasheets
1(IRF6641TRPbF)
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HTML Datasheet
1(IRF6641TRPbF)
Product Drawings
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Menge Preis
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