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ChinaBUK7E2R3-40E,127
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TEILNUMMER DES HERSTELLERS
BUK7E2R3-40E,127
BESCHREIBUNG
MOSFET N-CH 40V 120A I2PAK
DETAILIERTE BESCHREIBUNG
N-Channel 40 V 120A (Tc) 293W (Tc) Through Hole I2PAK
HERSTELLER
Nexperia USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
50
Lagerbestände
Technische Daten
Mfr
Nexperia USA Inc.
Series
TrenchMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
40 V
Current - Continuous Drain (Id) @ 25°C
120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
2.3mOhm @ 25A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
109.2 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
8500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
293W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
I2PAK
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
1727-7242
2156-BUK7E2R3-40E127
568-9850-5-ND
934066416127
568-9850-5
NEXNEXBUK7E2R3-40E,127
BUK7E2R340E127
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Nexperia USA Inc. BUK7E2R3-40E,127
Dokumente und Medien
Datasheets
1(BUK7E2R3-40E)
PCN Packaging
()
HTML Datasheet
1(BUK7E2R3-40E)
Menge Preis
-
Stellvertreter
Teil Nr. : BUK7E2R3-40E,127
Hersteller. : Rochester Electronics, LLC
Verfügbare Menge. : 3,778
Einzelpreis. : $0.92000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 3,778
Einzelpreis. : $0.92000
Ersatztyp. : Parametric Equivalent