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ChinaGES5816
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
GES5816
BESCHREIBUNG
TRANS NPN 40V 0.75A TO92
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 40 V 750 mA 120MHz 500 mW Through Hole TO-92-3
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
2,959
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
750 mA
Voltage - Collector Emitter Breakdown (Max)
40 V
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2mA, 2V
Power - Max
500 mW
Frequency - Transition
120MHz
Operating Temperature
-55°C ~ 135°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Umweltverträgliche Exportklassifikationen
RoHS Status
RoHS non-compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
2156-GES5816
HARHARGES5816
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/Harris Corporation GES5816
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 2959
Einzelpreis: $0.1
Verpackung: Bulk
MinMultiplikator: 2959
Verpackung: Bulk
MinMultiplikator: 2959
Stellvertreter
-