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ChinaSTL23NM60ND
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
STL23NM60ND
BESCHREIBUNG
MOSFET N-CH 600V 19.5A POWERFLAT
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 19.5A (Tc) 3W (Ta), 150W (Tc) Surface Mount PowerFlat™ (8x8) HV
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
EDACAD-MODELL
STL23NM60ND Models
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
STMicroelectronics
Series
FDmesh™ II
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
2050 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
3W (Ta), 150W (Tc)
Operating Temperature
150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerFlat™ (8x8) HV
Package / Case
8-PowerVDFN
Base Product Number
STL23
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
3 (168 Hours)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
497-11205-6
497-11205-2
497-11205-1
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STL23NM60ND
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PCN Assembly/Origin
1(PowerFLAT Assem Chg 25/Jul/2018)
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Menge Preis
-
Stellvertreter
Teil Nr. : SIHH180N60E-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 0
Einzelpreis. : $4.83000
Ersatztyp. : Similar
Verfügbare Menge. : 0
Einzelpreis. : $4.83000
Ersatztyp. : Similar