Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
AOW11S65
BESCHREIBUNG
MOSFET N-CH 650V 11A TO262
DETAILIERTE BESCHREIBUNG
N-Channel 650 V 11A (Tc) 198W (Tc) Through Hole TO-262
HERSTELLER
Alpha & Omega Semiconductor Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000

Technische Daten

Mfr
Alpha & Omega Semiconductor Inc.
Series
aMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
399mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13.2 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
646 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
198W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-262
Package / Case
TO-262-3 Long Leads, I2PAK, TO-262AA
Base Product Number
AOW11

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

785-1524-5
AOW11S65-ND
5202-AOW11S65

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Alpha & Omega Semiconductor Inc. AOW11S65

Dokumente und Medien

Datasheets
1(AOW(F)11S65)
Other Related Documents
1(AOS Green Policy)
Environmental Information
()
PCN Obsolescence/ EOL
()
PCN Assembly/Origin
1(Mult Dev Assem/Test Chg 19/Jul/2018)
HTML Datasheet
1(AOW(F)11S65)
Product Drawings
1(TO262 Pkg Drawing)

Menge Preis

-

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