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ChinaIRFHS8242TR2PBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRFHS8242TR2PBF
BESCHREIBUNG
MOSFET N-CH 25V 9.9A PQFN
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 9.9A (Ta), 21A (Tc) Surface Mount 6-PQFN (2x2)
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
400
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
9.9A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs
13mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id
2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs
10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
653 pF @ 10 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
6-PQFN (2x2)
Package / Case
6-PowerVDFN
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRFHS8242TR2PBFTR
IRFHS8242TR2PBFDKR
SP001565940
IRFHS8242TR2PBFCT
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRFHS8242TR2PBF
Dokumente und Medien
Datasheets
1(IRFHS8242PBF)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Discrete Power MOSFETs 40V and Below)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IRFHS8242PBF)
Simulation Models
1(IRFHS8242TR2PBF Saber Model)
Menge Preis
-
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