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ChinaNTMS5P02R2SG
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
NTMS5P02R2SG
BESCHREIBUNG
MOSFET P-CH 20V 3.95A 8SOIC
DETAILIERTE BESCHREIBUNG
P-Channel 20 V 3.95A (Ta) 790mW (Ta) Surface Mount 8-SOIC
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
NTMS5P02R2SG Models
STANDARDPAKET
2,500
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
3.95A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
33mOhm @ 5.4A, 4.5V
Vgs(th) (Max) @ Id
1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 4.5 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
1900 pF @ 16 V
FET Feature
-
Power Dissipation (Max)
790mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
NTMS5P
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0095
Andere Namen
2156-NTMS5P02R2SG-ONTR
NTMS5P02R2SGOSTR
NTMS5P02R2SG-ND
=NTMS5P02R2SGOSCT-ND
NTMS5P02R2SGOSCT
ONSONSNTMS5P02R2SG
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/onsemi NTMS5P02R2SG
Dokumente und Medien
Datasheets
1(NTMS5P02R2)
Environmental Information
()
PCN Obsolescence/ EOL
1(Multiple Devices 21/Jan/2010)
PCN Design/Specification
1(Multiple Devices Copper Wire 20/Aug/2008)
HTML Datasheet
1(NTMS5P02R2)
EDA Models
1(NTMS5P02R2SG Models)
Menge Preis
-
Stellvertreter
Teil Nr. : NTMS5P02R2G
Hersteller. : onsemi
Verfügbare Menge. : 2,315
Einzelpreis. : $0.88000
Ersatztyp. : Parametric Equivalent
Verfügbare Menge. : 2,315
Einzelpreis. : $0.88000
Ersatztyp. : Parametric Equivalent