Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
BSM080D12P2C008
BESCHREIBUNG
SIC 2N-CH 1200V 80A MODULE
DETAILIERTE BESCHREIBUNG
Mosfet Array 1200V (1.2kV) 80A (Tc) 600W Chassis Mount Module
HERSTELLER
Rohm Semiconductor
STANDARD LEADTIME
17 Weeks
EDACAD-MODELL
BSM080D12P2C008 Models
STANDARDPAKET

Technische Daten

Mfr
Rohm Semiconductor
Series
-
Package
Tray
Product Status
Active
Technology
Silicon Carbide (SiC)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
4V @ 13.2mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
800pF @ 10V
Power - Max
600W
Operating Temperature
175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Base Product Number
BSM080

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Rohm Semiconductor BSM080D12P2C008

Dokumente und Medien

Datasheets
()
Other Related Documents
1(SiCPMCtype Inner Structure)
Product Training Modules
()
Video File
()
Environmental Information
()
Featured Product
()
HTML Datasheet
1(BSM080D12P2C008)
EDA Models
1(BSM080D12P2C008 Models)
Simulation Models
1(BSM080D12P2C008 Spice Model)
Reliability Documents
1(SiC PM Reliability Test)

Menge Preis

QUANTITÄT: 12
Einzelpreis: $329.64833
Verpackung: Tray
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $342.53
Verpackung: Tray
MinMultiplikator: 1

Stellvertreter

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