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ChinaBSP297L6327HTSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSP297L6327HTSA1
BESCHREIBUNG
MOSFET N-CH 200V 660MA SOT223-4
DETAILIERTE BESCHREIBUNG
N-Channel 200 V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4-21
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
660mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.8Ohm @ 660mA, 10V
Vgs(th) (Max) @ Id
1.8V @ 400µA
Gate Charge (Qg) (Max) @ Vgs
16.1 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
357 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4-21
Package / Case
TO-261-4, TO-261AA
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
BSP297L6327INDKR
BSP297L6327HTSA1CT
BSP297L6327HTSA1DKR
BSP297L6327INCT
BSP297L6327INDKR-ND
BSP297L6327XT
BSP297L6327INCT-ND
BSP297L6327INTR-ND
BSP297 L6327-ND
BSP297L6327HTSA1TR
BSP297L6327
BSP297L6327INTR
SP000089213
2156-BSP297L6327HTSA1-ITTR
IFEINFBSP297L6327HTSA1
BSP297 L6327
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSP297L6327HTSA1
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Datasheets
1(BSP297)
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HTML Datasheet
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Menge Preis
-
Stellvertreter
Teil Nr. : BSP297H6327XTSA1
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Verfügbare Menge. : 7,504
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