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ChinaFQA6N80
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FQA6N80
BESCHREIBUNG
MOSFET N-CH 800V 6.3A TO3P
DETAILIERTE BESCHREIBUNG
N-Channel 800 V 6.3A (Tc) 185W (Tc) Through Hole TO-3P
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
254
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
QFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
800 V
Current - Continuous Drain (Id) @ 25°C
6.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.95Ohm @ 3.15A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1500 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
185W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-3P
Package / Case
TO-3P-3, SC-65-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-FQA6N80-FS
FAIFSCFQA6N80
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor FQA6N80
Dokumente und Medien
Datasheets
1(FQA6N80)
Menge Preis
QUANTITÄT: 254
Einzelpreis: $1.19
Verpackung: Tube
MinMultiplikator: 254
Verpackung: Tube
MinMultiplikator: 254
Stellvertreter
-