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ChinaBSP321PL6327
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BSP321PL6327
BESCHREIBUNG
P-CHANNEL MOSFET
DETAILIERTE BESCHREIBUNG
P-Channel 100 V 980mA (Tc) 1.8W (Ta) Surface Mount PG-SOT223-4-21
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,154
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
SIPMOS®
Package
Bulk
Product Status
Active
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
980mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
900mOhm @ 980mA, 10V
Vgs(th) (Max) @ Id
4V @ 380µA
Gate Charge (Qg) (Max) @ Vgs
12 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
319 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
1.8W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-SOT223-4-21
Package / Case
TO-261-4, TO-261AA
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
INFINFBSP321PL6327
2156-BSP321PL6327
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BSP321PL6327
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 1154
Einzelpreis: $0.26
Verpackung: Bulk
MinMultiplikator: 1154
Verpackung: Bulk
MinMultiplikator: 1154
Stellvertreter
-