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ChinaHUF75623P3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
HUF75623P3
BESCHREIBUNG
MOSFET N-CH 100V 22A TO220-3
DETAILIERTE BESCHREIBUNG
N-Channel 100 V 22A (Tc) 85W (Tc) Through Hole TO-220-3
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
579
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
UltraFET™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
22A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
64mOhm @ 22A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
52 nC @ 20 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
790 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
85W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220-3
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCHUF75623P3
2156-HUF75623P3-FS
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Fairchild Semiconductor HUF75623P3
Dokumente und Medien
Datasheets
1(HUF75623P3)
Menge Preis
QUANTITÄT: 579
Einzelpreis: $0.52
Verpackung: Tube
MinMultiplikator: 579
Verpackung: Tube
MinMultiplikator: 579
Stellvertreter
-