Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SPB08P06PGATMA1
BESCHREIBUNG
MOSFET P-CH 60V 8.8A D2PAK
DETAILIERTE BESCHREIBUNG
P-Channel 60 V 8.8A (Ta) 42W (Tc) Surface Mount PG-TO263-3
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000

Technische Daten

Mfr
Infineon Technologies
Series
SIPMOS®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
13 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
420 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
42W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Base Product Number
SPB08P

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

SPB08P06PGATMA1CT
SPB08P06PGINDKR-ND
SPB08P06PGINCT
SPB08P06PGINCT-ND
IFEINFSPB08P06PGATMA1
2156-SPB08P06PGATMA1
SPB08P06PGINTR
SPB08P06PGATMA1TR
SPB08P06PGXT
SPB08P06PGINTR-ND
SP000102179
SPB08P06P G-ND
SPB08P06P G
SPB08P06PGATMA1DKR
SPB08P06PGINDKR

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies SPB08P06PGATMA1

Dokumente und Medien

Datasheets
1(SPB08P06P G)
Other Related Documents
1(Part Number Guide)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(SPB08P06P G)
Simulation Models
1(MOSFET OptiMOS™ 60V P-Channel Spice Model)

Menge Preis

-

Stellvertreter

Teil Nr. : SPB80P06PGATMA1
Hersteller. : Infineon Technologies
Verfügbare Menge. : 4,212
Einzelpreis. : $4.32000
Ersatztyp. : Similar