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ChinaIRF6668TRPBF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6668TRPBF
BESCHREIBUNG
IRF6668 - 12V-300V N-CHANNEL POW
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 55A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MZ
HERSTELLER
International Rectifier
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
318
Lagerbestände
Technische Daten
Mfr
International Rectifier
Series
HEXFET®
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
55A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
15mOhm @ 12A, 10V
Vgs(th) (Max) @ Id
4.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs
31 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1320 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
2.8W (Ta), 89W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ MZ
Package / Case
DirectFET™ Isometric MZ
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-IRF6668TRPBF
INFINFIRF6668TRPBF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/International Rectifier IRF6668TRPBF
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 318
Einzelpreis: $0.94
Verpackung: Bulk
MinMultiplikator: 318
Verpackung: Bulk
MinMultiplikator: 318
Stellvertreter
-