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TEILNUMMER DES HERSTELLERS
PHPT60610NY115
BESCHREIBUNG
POWER BIPOLAR TRANSISTOR NPN
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 60 V 10 A 140MHz 1.5 W Surface Mount LFPAK56, Power-SO8
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
PHPT60610NY115 Models
STANDARDPAKET
1,268
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Active
Transistor Type
NPN
Current - Collector (Ic) (Max)
10 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
360mV @ 1A, 10A
Current - Collector Cutoff (Max)
100nA
DC Current Gain (hFE) (Min) @ Ic, Vce
240 @ 500mA, 2V
Power - Max
1.5 W
Frequency - Transition
140MHz
Operating Temperature
175°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Surface Mount
Package / Case
SC-100, SOT-669
Supplier Device Package
LFPAK56, Power-SO8
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0075
Andere Namen
NEXNXPPHPT60610NY115
2156-PHPT60610NY115
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. PHPT60610NY115
Dokumente und Medien
Datasheets
1(PHPT60610NY)
HTML Datasheet
1(PHPT60610NY)
EDA Models
1(PHPT60610NY115 Models)
Menge Preis
-
Stellvertreter
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