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ChinaBC635,112
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BC635,112
BESCHREIBUNG
TRANS NPN 45V 1A TO92-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 45 V 1 A 180MHz 830 mW Through Hole TO-92-3
HERSTELLER
NXP USA Inc.
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
NXP USA Inc.
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
1 A
Voltage - Collector Emitter Breakdown (Max)
45 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
63 @ 150mA, 2V
Power - Max
830 mW
Frequency - Transition
180MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package
TO-92-3
Base Product Number
BC63
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.21.0075
Andere Namen
BC635P
BC635P-ND
933221920112
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/NXP USA Inc. BC635,112
Dokumente und Medien
Datasheets
1(BC635, BCP54, BCX54)
Environmental Information
()
PCN Packaging
1(All Dev Label Update 15/Dec/2020)
HTML Datasheet
1(BC635, BCP54, BCX54)
Menge Preis
-
Stellvertreter
-