Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SI4176DY-T1-E3
BESCHREIBUNG
MOSFET N-CH 30V 12A 8SO
DETAILIERTE BESCHREIBUNG
N-Channel 30 V 12A (Tc) 2.4W (Ta), 5W (Tc) Surface Mount 8-SOIC
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
20mOhm @ 8.3A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
15 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
490 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
2.4W (Ta), 5W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-SOIC
Package / Case
8-SOIC (0.154", 3.90mm Width)
Base Product Number
SI4176

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

-

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI4176DY-T1-E3

Dokumente und Medien

Datasheets
1(SI4176DY)
PCN Assembly/Origin
1(Manufacturing Capacity Expansion 27/Jul/2023)
HTML Datasheet
1(SI4176DY)

Menge Preis

-

Stellvertreter

Teil Nr. : DMG4466SSS-13
Hersteller. : Diodes Incorporated
Verfügbare Menge. : 4,523
Einzelpreis. : $0.44000
Ersatztyp. : Similar