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ChinaFMM60-02TF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FMM60-02TF
BESCHREIBUNG
MOSFET 2N-CH 200V 33A I4-PAC
DETAILIERTE BESCHREIBUNG
Mosfet Array 200V 33A 125W Through Hole ISOPLUS i4-PAC™
HERSTELLER
IXYS
STANDARD LEADTIME
45 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
IXYS
Series
HiPerFET™
Package
Tube
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
2 N-Channel (Dual)
FET Feature
-
Drain to Source Voltage (Vdss)
200V
Current - Continuous Drain (Id) @ 25°C
33A
Rds On (Max) @ Id, Vgs
40mOhm @ 30A, 10V
Vgs(th) (Max) @ Id
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
3700pF @ 25V
Power - Max
125W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
i4-Pac™-5
Supplier Device Package
ISOPLUS i4-PAC™
Base Product Number
FMM60
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
California Prop 65
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/IXYS FMM60-02TF
Dokumente und Medien
Datasheets
1(FMM60-02TF)
Environmental Information
1(Ixys IC REACH)
HTML Datasheet
1(FMM60-02TF)
Menge Preis
QUANTITÄT: 25
Einzelpreis: $17.0832
Verpackung: Tube
MinMultiplikator: 25
Verpackung: Tube
MinMultiplikator: 25
Stellvertreter
-