Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
SIA430DJT-T4-GE3
BESCHREIBUNG
MOSFET N-CH 20V 12A/12A PPAK
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 12A (Ta), 12A (Tc) 3.5W (Ta), 19.2W (Tc) Surface Mount PowerPAK® SC-70-6
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
18 Weeks
EDACAD-MODELL
STANDARDPAKET

Technische Daten

Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta), 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
13.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
800 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
3.5W (Ta), 19.2W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
PowerPAK® SC-70-6
Package / Case
PowerPAK® SC-70-6
Base Product Number
SIA430

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SIA430DJT-T4-GE3

Dokumente und Medien

Datasheets
1(SIA430DJT)
PCN Assembly/Origin
1(Manufacturing Capacity Expansion 27/Jul/2023)
HTML Datasheet
1(SIA430DJT)

Menge Preis

QUANTITÄT: 30000
Einzelpreis: $0.15008
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
QUANTITÄT: 9000
Einzelpreis: $0.15362
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000
QUANTITÄT: 6000
Einzelpreis: $0.16544
Verpackung: Tape & Reel (TR)
MinMultiplikator: 6000

Stellvertreter

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