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ChinaBTS115ANKSA1
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TEILNUMMER DES HERSTELLERS
BTS115ANKSA1
BESCHREIBUNG
MOSFET N-CH 50V 15.5A TO220AB
DETAILIERTE BESCHREIBUNG
N-Channel 50 V 15.5A (Tc) 50W (Tc) Through Hole TO-220AB
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
TEMPFET®
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
50 V
Current - Continuous Drain (Id) @ 25°C
15.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V
Rds On (Max) @ Id, Vgs
120mOhm @ 7.8A, 4.5V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
735 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-220AB
Package / Case
TO-220-3
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
2156-BTS115ANKSA1
BTS115AIN-ND
BTS115A
BTS115AIN
INFINFBTS115ANKSA1
SP000011193
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies BTS115ANKSA1
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Menge Preis
-
Stellvertreter
Teil Nr. : IRFZ24PBF
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 372
Einzelpreis. : $1.58000
Ersatztyp. : Similar
Verfügbare Menge. : 372
Einzelpreis. : $1.58000
Ersatztyp. : Similar