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ChinaAPTGLQ25H120T2G
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TEILNUMMER DES HERSTELLERS
APTGLQ25H120T2G
BESCHREIBUNG
IGBT MODULE 1200V 50A 165W SP2
DETAILIERTE BESCHREIBUNG
IGBT Module Trench Field Stop Full Bridge 1200 V 50 A 165 W Chassis Mount SP2
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Active
IGBT Type
Trench Field Stop
Configuration
Full Bridge
Voltage - Collector Emitter Breakdown (Max)
1200 V
Current - Collector (Ic) (Max)
50 A
Power - Max
165 W
Vce(on) (Max) @ Vge, Ic
2.42V @ 15V, 25A
Current - Collector Cutoff (Max)
50 µA
Input Capacitance (Cies) @ Vce
1.43 nF @ 25 V
Input
Standard
NTC Thermistor
Yes
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
SP2
Base Product Number
APTGLQ25
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APTGLQ25H120T2G-ND
150-APTGLQ25H120T2G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/IGBT Modules/Microsemi Corporation APTGLQ25H120T2G
Dokumente und Medien
Environmental Information
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Menge Preis
-
Stellvertreter
-