English
Spain
Rusia
Italy
ChinaSI6466ADQ-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI6466ADQ-T1-GE3
BESCHREIBUNG
MOSFET N-CH 20V 6.8A 8TSSOP
DETAILIERTE BESCHREIBUNG
N-Channel 20 V 6.8A (Ta) 1.05W (Ta) Surface Mount 8-TSSOP
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
TrenchFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
6.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
14mOhm @ 8.1A, 4.5V
Vgs(th) (Max) @ Id
450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs
27 nC @ 5 V
Vgs (Max)
±8V
FET Feature
-
Power Dissipation (Max)
1.05W (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-TSSOP
Package / Case
8-TSSOP (0.173", 4.40mm Width)
Base Product Number
SI6466
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI6466ADQ-T1-GE3
Dokumente und Medien
Environmental Information
()
PCN Obsolescence/ EOL
1(PCN- SIL-0582013 05/Dec/2013)
HTML Datasheet
1(SI6466ADQ)
Menge Preis
-
Stellvertreter
-