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ChinaAPTC60DAM24CT1G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APTC60DAM24CT1G
BESCHREIBUNG
MOSFET N-CH 600V 95A SP4
DETAILIERTE BESCHREIBUNG
N-Channel 600 V 95A (Tc) 462W (Tc) Chassis Mount SP4
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
CoolMOS™
Package
Bulk
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
95A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
24mOhm @ 47.5A, 10V
Vgs(th) (Max) @ Id
3.9V @ 5mA
Gate Charge (Qg) (Max) @ Vgs
300 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
14400 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
462W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Supplier Device Package
SP4
Package / Case
SP4
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
APTC60DAM24CT1G-ND
150-APTC60DAM24CT1G
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Microsemi Corporation APTC60DAM24CT1G
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Environmental Information
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Menge Preis
-
Stellvertreter
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