English
Spain
Rusia
Italy
ChinaS200-50
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
S200-50
BESCHREIBUNG
RF TRANS NPN 110V 30MHZ 55HX
DETAILIERTE BESCHREIBUNG
RF Transistor NPN 110V 30A 1.5MHz ~ 30MHz 320W Chassis Mount 55HX
HERSTELLER
Microsemi Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1
Lagerbestände
Technische Daten
Mfr
Microsemi Corporation
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
110V
Frequency - Transition
1.5MHz ~ 30MHz
Noise Figure (dB Typ @ f)
-
Gain
12dB ~ 14.5dB
Power - Max
320W
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 1A, 5V
Current - Collector (Ic) (Max)
30A
Operating Temperature
150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
55HX
Supplier Device Package
55HX
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
S200-50-ND
150-S200-50
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Bipolar RF Transistors/Microsemi Corporation S200-50
Dokumente und Medien
Datasheets
1(S200-50)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Devices 10/Aug/2017)
HTML Datasheet
1(S200-50)
Menge Preis
-
Stellvertreter
-