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ChinaIPA50R399CPXKSA1
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IPA50R399CPXKSA1
BESCHREIBUNG
MOSFET N-CH 500V 9A TO220-FP
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 9A (Tc) 83W (Tc) Through Hole PG-TO220-3-31
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
500
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
CoolMOS™
Package
Tube
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
399mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id
3.5V @ 330µA
Gate Charge (Qg) (Max) @ Vgs
23 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
890 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
PG-TO220-3-31
Package / Case
TO-220-3 Full Pack
Base Product Number
IPA50R
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SP000234987
ROCINFIPA50R399CPXKSA1
2156-IPA50R399CPXKSA1-IT
IPA50R399CP
IPA50R399CP-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IPA50R399CPXKSA1
Dokumente und Medien
Datasheets
1(IPA50R399CP)
Other Related Documents
1(Part Number Guide)
Product Training Modules
1(Power Factor Correction)
Featured Product
1(Data Processing Systems)
HTML Datasheet
1(IPA50R399CP)
Simulation Models
1(CoolMOS™ Power MOSFET 500V C3 Spice Model)
Menge Preis
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