Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
STY105NM50N
BESCHREIBUNG
MOSFET N-CH 500V 110A MAX247
DETAILIERTE BESCHREIBUNG
N-Channel 500 V 110A (Tc) 625W (Tc) Through Hole MAX247™
HERSTELLER
STMicroelectronics
STANDARD LEADTIME
26 Weeks
EDACAD-MODELL
STY105NM50N Models
STANDARDPAKET
30

Technische Daten

Mfr
STMicroelectronics
Series
MDmesh™ II
Package
Tube
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
110A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
22mOhm @ 52A, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
326 nC @ 10 V
Vgs (Max)
±25V
Input Capacitance (Ciss) (Max) @ Vds
9600 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
625W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
MAX247™
Package / Case
TO-247-3
Base Product Number
STY105

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095

Andere Namen

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Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/STMicroelectronics STY105NM50N

Dokumente und Medien

Datasheets
1(STY105NM50N)
Other Related Documents
1(STY105NM50N View All Specifications)
Product Training Modules
1(STMicroelectronics ST MOSFETs)
PCN Assembly/Origin
1(IPG-PWR/14/8674 02/Sep/2014)
HTML Datasheet
1(STY105NM50N)
EDA Models
1(STY105NM50N Models)

Menge Preis

QUANTITÄT: 500
Einzelpreis: $16.42502
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 100
Einzelpreis: $19.2481
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 10
Einzelpreis: $22.007
Verpackung: Tube
MinMultiplikator: 1
QUANTITÄT: 1
Einzelpreis: $24.77
Verpackung: Tube
MinMultiplikator: 1

Stellvertreter

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