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ChinaSI3475DV-T1-GE3
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
SI3475DV-T1-GE3
BESCHREIBUNG
MOSFET P-CH 200V 0.95A 6-TSOP
DETAILIERTE BESCHREIBUNG
P-Channel 200 V 950mA (Tc) Surface Mount 6-TSOP
HERSTELLER
Vishay Siliconix
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
3,000
Lagerbestände
Technische Daten
Mfr
Vishay Siliconix
Series
-
Package
Cut Tape (CT)
Product Status
Obsolete
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
200 V
Current - Continuous Drain (Id) @ 25°C
950mA (Tc)
Rds On (Max) @ Id, Vgs
1.61Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 50 V
FET Feature
-
Mounting Type
Surface Mount
Supplier Device Package
6-TSOP
Package / Case
SOT-23-6 Thin, TSOT-23-6
Base Product Number
SI3475
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
SI3475DV-T1-GE3DKR
SI3475DV-T1-GE3CT
SI3475DV-T1-GE3TR
Q9162672
SI3475DVT1GE3
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Vishay Siliconix SI3475DV-T1-GE3
Dokumente und Medien
Datasheets
1(SI3475DV)
PCN Obsolescence/ EOL
1(SIL-1072014 Rev0 17/Dec/2014)
HTML Datasheet
1(SI3475DV)
Menge Preis
-
Stellvertreter
Teil Nr. : SI3437DV-T1-GE3
Hersteller. : Vishay Siliconix
Verfügbare Menge. : 14,589
Einzelpreis. : $0.89000
Ersatztyp. : Similar
Verfügbare Menge. : 14,589
Einzelpreis. : $0.89000
Ersatztyp. : Similar