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ChinaRFD3N08LSM9A
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
RFD3N08LSM9A
BESCHREIBUNG
N-CHANNEL POWER MOSFET
DETAILIERTE BESCHREIBUNG
N-Channel 80 V 3A (Tc) 30W (Tc) Surface Mount TO-252 (DPAK)
HERSTELLER
Harris Corporation
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
833
Lagerbestände
Technische Daten
Mfr
Harris Corporation
Series
-
Package
Bulk
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
80 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
5V
Rds On (Max) @ Id, Vgs
800mOhm @ 3A, 5V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
8.5 nC @ 10 V
Vgs (Max)
±10V
Input Capacitance (Ciss) (Max) @ Vds
125 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
30W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-252 (DPAK)
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Umweltverträgliche Exportklassifikationen
RoHS Status
Not applicable
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
Vendor Undefined
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
HARHARRFD3N08LSM9A
2156-RFD3N08LSM9A
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Harris Corporation RFD3N08LSM9A
Dokumente und Medien
Datasheets
1(RFD3055LESM9A)
Menge Preis
QUANTITÄT: 833
Einzelpreis: $0.36
Verpackung: Bulk
MinMultiplikator: 833
Verpackung: Bulk
MinMultiplikator: 833
Stellvertreter
-