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Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
IRF6892STR1PBF
BESCHREIBUNG
MOSFET N-CH 25V 28A DIRECTFET
DETAILIERTE BESCHREIBUNG
N-Channel 25 V 28A (Ta), 125A (Tc) 2.1W (Ta), 42W (Tc) Surface Mount DIRECTFET™ S3C
HERSTELLER
Infineon Technologies
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
1,000
Lagerbestände
Technische Daten
Mfr
Infineon Technologies
Series
HEXFET®
Package
Tape & Reel (TR)
Product Status
Obsolete
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
25 V
Current - Continuous Drain (Id) @ 25°C
28A (Ta), 125A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
1.7mOhm @ 28A, 10V
Vgs(th) (Max) @ Id
2.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs
25 nC @ 4.5 V
Vgs (Max)
±16V
Input Capacitance (Ciss) (Max) @ Vds
2510 pF @ 13 V
FET Feature
-
Power Dissipation (Max)
2.1W (Ta), 42W (Tc)
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
DIRECTFET™ S3C
Package / Case
DirectFET™ Isometric S3C
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
IRF6892STR1PBFDKR
SP001526954
IRF6892STR1PBFCT
IRF6892STR1PBFTR
IRF6892STR1PBF-ND
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/Single FETs, MOSFETs/Infineon Technologies IRF6892STR1PBF
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Datasheets
1(IRF6892STR (1) PBF)
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