Übersicht der Teilenummer

TEILNUMMER DES HERSTELLERS
2SB1215S-E
BESCHREIBUNG
TRANS PNP 100V 3A TP
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor PNP 100 V 3 A 130MHz 1 W Through Hole TP
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
2SB1215S-E Models
STANDARDPAKET
500

Technische Daten

Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
PNP
Current - Collector (Ic) (Max)
3 A
Voltage - Collector Emitter Breakdown (Max)
100 V
Vce Saturation (Max) @ Ib, Ic
500mV @ 150mA, 1.5A
Current - Collector Cutoff (Max)
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
140 @ 500mA, 5V
Power - Max
1 W
Frequency - Transition
130MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package
TP
Base Product Number
2SB1215

Umweltverträgliche Exportklassifikationen

RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
Not Applicable
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0075

Andere Namen

2156-2SB1215S-E
ONSONS2SB1215S-E

Kategorie

/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi 2SB1215S-E

Dokumente und Medien

Datasheets
1(2SB1215/2SD1815)
Environmental Information
()
PCN Obsolescence/ EOL
1(Mult Dev EOL 30/Sep/2022)
EDA Models
1(2SB1215S-E Models)

Menge Preis

-

Stellvertreter

Teil Nr. : 2SB1215S-E
Hersteller. : Rochester Electronics, LLC
Verfügbare Menge. : 1,175
Einzelpreis. : $0.44000
Ersatztyp. : Parametric Equivalent
Teil Nr. : 2SB1215S-H
Hersteller. : Rochester Electronics, LLC
Verfügbare Menge. : 9,498
Einzelpreis. : $0.34000
Ersatztyp. : Parametric Equivalent