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ChinaBD535J
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
BD535J
BESCHREIBUNG
TRANS NPN 60V 8A TO220-3
DETAILIERTE BESCHREIBUNG
Bipolar (BJT) Transistor NPN 60 V 8 A 12MHz 50 W Through Hole TO-220-3
HERSTELLER
onsemi
STANDARD LEADTIME
EDACAD-MODELL
BD535J Models
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
onsemi
Series
-
Package
Bulk
Product Status
Obsolete
Transistor Type
NPN
Current - Collector (Ic) (Max)
8 A
Voltage - Collector Emitter Breakdown (Max)
60 V
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Current - Collector Cutoff (Max)
100µA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 2A, 2V
Power - Max
50 W
Frequency - Transition
12MHz
Operating Temperature
150°C (TJ)
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Base Product Number
BD535
Umweltverträgliche Exportklassifikationen
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/Bipolar (BJT)/Single Bipolar Transistors/onsemi BD535J
Dokumente und Medien
Datasheets
1(BD533/535/537)
Environmental Information
()
PCN Design/Specification
1(Lead Frame Dimensions 29/Nov/2007)
HTML Datasheet
()
EDA Models
1(BD535J Models)
Product Drawings
1(TO220B03 Pkg Drawing)
Menge Preis
-
Stellvertreter
Teil Nr. : 2N6487G
Hersteller. : onsemi
Verfügbare Menge. : 486
Einzelpreis. : $0.99000
Ersatztyp. : Similar
Verfügbare Menge. : 486
Einzelpreis. : $0.99000
Ersatztyp. : Similar