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ChinaFGB20N60SF
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
FGB20N60SF
BESCHREIBUNG
INSULATED GATE BIPOLAR TRANSISTO
DETAILIERTE BESCHREIBUNG
IGBT Field Stop 600 V 40 A 208 W Surface Mount TO-263 (D2PAK)
HERSTELLER
Fairchild Semiconductor
STANDARD LEADTIME
EDACAD-MODELL
STANDARDPAKET
167
Lagerbestände
Technische Daten
Mfr
Fairchild Semiconductor
Series
-
Package
Bulk
Product Status
Active
IGBT Type
Field Stop
Voltage - Collector Emitter Breakdown (Max)
600 V
Current - Collector (Ic) (Max)
40 A
Current - Collector Pulsed (Icm)
60 A
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 20A
Power - Max
208 W
Switching Energy
370µJ (on), 160µJ (off)
Input Type
Standard
Gate Charge
65 nC
Td (on/off) @ 25°C
13ns/90ns
Test Condition
400V, 20A, 10Ohm, 15V
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package
TO-263 (D2PAK)
Umweltverträgliche Exportklassifikationen
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
FAIFSCFGB20N60SF
2156-FGB20N60SF
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/IGBTs/Single IGBTs/Fairchild Semiconductor FGB20N60SF
Dokumente und Medien
Datasheets
1(Datasheet)
Menge Preis
QUANTITÄT: 167
Einzelpreis: $1.8
Verpackung: Bulk
MinMultiplikator: 167
Verpackung: Bulk
MinMultiplikator: 167
Stellvertreter
-