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ChinaAPTM100H46FT3G
Übersicht der Teilenummer
TEILNUMMER DES HERSTELLERS
APTM100H46FT3G
BESCHREIBUNG
MOSFET 4N-CH 1000V 19A SP3
DETAILIERTE BESCHREIBUNG
Mosfet Array 1000V (1kV) 19A 357W Chassis Mount SP3
HERSTELLER
Microchip Technology
STANDARD LEADTIME
48 Weeks
EDACAD-MODELL
STANDARDPAKET
Lagerbestände
Technische Daten
Mfr
Microchip Technology
Series
POWER MOS 8™
Package
Bulk
Product Status
Active
Technology
MOSFET (Metal Oxide)
Configuration
4 N-Channel (Full Bridge)
FET Feature
-
Drain to Source Voltage (Vdss)
1000V (1kV)
Current - Continuous Drain (Id) @ 25°C
19A
Rds On (Max) @ Id, Vgs
552mOhm @ 16A, 10V
Vgs(th) (Max) @ Id
5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs
260nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
6800pF @ 25V
Power - Max
357W
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Chassis Mount
Package / Case
SP3
Supplier Device Package
SP3
Base Product Number
APTM100
Umweltverträgliche Exportklassifikationen
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
Andere Namen
-
Kategorie
/Product Index/Discrete Semiconductor Products/Transistors/FETs, MOSFETs/FET, MOSFET Arrays/Microchip Technology APTM100H46FT3G
Dokumente und Medien
Datasheets
1(APTM100H46FT3G)
Environmental Information
()
PCN Design/Specification
1(SP3F Plastic Frame Update 16/Jul/2015)
PCN Assembly/Origin
1(Assembly Site 04/Aug/2023)
HTML Datasheet
1(APTM100H46FT3G)
Menge Preis
QUANTITÄT: 12
Einzelpreis: $103.68
Verpackung: Bulk
MinMultiplikator: 12
Verpackung: Bulk
MinMultiplikator: 12
Stellvertreter
-